Embedded NOR Flash Memory Process with NAND Cell and True Logic Compatible Low Voltage Device

ABSTRACT

An integrated circuit formed of nonvolatile memory array circuits, logic circuits and linear analog circuits is formed on a substrate. The nonvolatile memory array circuits, the logic circuits and the linear analog circuits are separated by isolation regions formed of a shallow trench isolation. The nonvolatile memory array circuits are formed in a triple well structure. The nonvolatile memory array circuits are NAND-based NOR memory circuits formed of at least two floating gate transistors that are serially connected such that at least one of the floating gate transistors functions as a select gate transistor to prevent leakage current through the charge retaining transistors when the charge retaining transistors is not selected for reading. Each column of the NAND-based NOR memory circuits are associated with and connected to one bit line and one source line.

This application claims priority under 35 U.S.C. §120 and 37 CFR §1.78as a divisional application to U.S. patent application Ser. No.13/135,220, filed Jun. 29, 2011, which in turn claims priority under 35U.S.C. §119 to U.S. Provisional Patent Application Ser. No. 61/398,964,filed on Jul. 1, 2010, assigned to the same assignee as the presentdisclosure, and both of which are herein incorporated by reference intheir entirety.

RELATED PATENT APPLICATIONS

U.S. patent application Ser. No. 12/387,771 (771), filed on May 7, 2009assigned to the same assignee as the present disclosure, andincorporated herein by reference in its entirety.

U.S. patent application Ser. No. 12/455,337, filed on Jun. 1, 2009assigned to the same assignee as the present disclosure, andincorporated herein by reference in its entirety.

U.S. patent application Ser. No. 12/455,936, filed on Jun. 9, 2009assigned to the same assignee as the present disclosure, andincorporated herein by reference in its entirety.

U.S. patent application Ser. No. 12/456,354, filed on Jun. 16, 2009assigned to the same assignee as the present disclosure, andincorporated herein by reference in its entirety.

U.S. patent application Ser. No. 12/456,744, filed on Jun. 22, 2009assigned to the same assignee as the present disclosure, andincorporated herein by reference in its entirety.

TECHNICAL FIELD

This disclosure relates generally to integrated circuits and toprocesses for manufacturing integrated circuits. More particularly, thisdisclosure relates to nonvolatile flash memory circuits fabricated withlogic and linear circuits as a system-on-chip (SoC) and to processes formanufacturing nonvolatile flash memory circuits fabricated with logicand linear circuits as a system-on-chip (SoC).

BACKGROUND

As is known in the art, Flash nonvolatile memory is a solid-state memorytechnology that is widely used in many applications such as consumercell phones and personal digital assistants to provide permanent datastorage. The NAND Flash and NOR Flash memory have emerged as thedominant varieties of non-volatile semiconductor memories. The NANDFlash memory has a very small cell size and is used primarily as ahigh-density data storage medium. Alternately, the NOR Flash hasapproximately one quarter the density of the NAND flash memory and istypically used for program code storage and direct execution. Theadvantages of the NAND flash are higher memory density and thus lowerbit cost, relatively fast write speed, and lower active power. Theadvantages of the NOR flash memory are relatively fast read speed andrandom access to provide ease of access for executing programming code.

NOR flash memory cells suffer from a punch-through phenomenon of the MOScharge retaining transistors for present advanced integrated circuitmanufacturing technology nodes. Punch-through is caused when drain andsource depletion regions merge, if a sufficiently large reverse bias isapplied. This occurs with MOS transistors with very short channellengths. The energy barrier that keeps the electrons in the sourceregion of an NMOS transistor is lowered when the drain and sourcedepletion merge. In this instance many electrons start to flow from thesource to the drain even when the gate voltage is below the thresholdvoltage level of the NMOS transistor and the NMOS transistor is notsupposed to conduct. This leakage current is sufficient large to causethe consumption of a relatively large amount of power duringprogramming. The MOS charge retaining transistors are designed to have achannel length that is sufficiently large to prevent the punch-through.

The NAND flash memory cell is structured to have a serial NAND stringwith a gating transistor overcomes this scaling problem and is in massproduction at the present advanced integrated circuit manufacturingtechnology minimum feature size of approximately 19 nm. However, NANDflash memory has a relatively slow read speed and is thus not suitablefor an embedded application. While there are embedded NAND and NOR flashmemory designs, there is no true embedded flash memory technology thatis available for mass production in the semiconductor industry that haslow power consumption to meet the requirement of “Green Memory”.Nonetheless, the demand for an integrated circuit process capable ofhaving a NAND and NOR flash nonvolatile memory is increasing, becausemore and more System-on-Chip (SoC) integrated circuits are required withthe embedded flash memory designs.

SUMMARY

An object of this disclosure is to provide circuits and methods ofmanufacture of integrated circuits combining nonvolatile memory circuitswith logic and linear analog circuits.

To accomplish at least this object, an integrated circuit is formed on asubstrate. The integrated circuit is formed of nonvolatile memory arraycircuits, logic circuits and linear analog circuits. The nonvolatilememory array circuits, the logic circuits, and the linear analogcircuits are each formed in active semiconductor areas separated byisolation regions formed with a shallow trench isolation. Thenonvolatile memory array circuits are formed in a triple well structurewhere a first deep well is formed of a first conductivity type such as adiffusion with an N-type impurity and a second well is formed of asecond conductivity type where the second well such as a diffusion of aP-type impurity.

The nonvolatile memory array circuits are constructed of rows andcolumns of NAND or NOR charge retaining cells formed within designatedactive areas. The NOR charge retaining cells are NAND-based NOR memorycells having at least two floating gate transistors serially connectedsuch that at least one of the floating gate transistors functions as aselect gate transistor to prevent leakage current through the chargeretaining transistors when the charge retaining transistors is notselected for reading. The nonvolatile memory array circuits formed ofNAND-based NOR charge retaining cells has a column of the NAND-based NORcharge retaining cells with a bit line and source line associated witheach column of the NAND-based NOR charge retaining cells. A drain of thetopmost charge retaining transistor is connected to the bit lineassociated with and parallel to each of the columns of seriallyconnected NAND-based NOR charge retaining cells. Similarly, a source ofthe bottommost charge retaining transistor is connected to the sourceline associated with and parallel to each of the columns of NAND-basedNOR charge retaining cells and parallel to the associated bit line. Acontrol gate of each of the rows of NAND-based NOR flash memory cells isconnected to a word line.

The active areas for peripheral circuitry of the nonvolatile memoryarray circuits, the logic circuits, and the linear circuits have ashallow well of the first conductivity type and a shallow well of thesecond conductivity type into which the low voltage logic devices arefabricated. The shallow well of the first conductivity type is an N-welland the shallow well of the second conductivity type is a P-well. PMOStransistors are formed in the N-well and NMOS transistors are formed inthe P-well.

High voltage MOS transistors are formed in the substrate. To establishthe appropriate threshold, ion implantation is performed at the channelregions of the high voltage MOS transistors. One ion implantationoperation sets the threshold for a high voltage MOS transistor with astandard threshold voltage. A second ion implantation operation sets thethreshold for a zero threshold high voltage MOS transistor. The lowvoltage and high voltage transistors are implemented for peripheralcircuits for the nonvolatile memory array circuits, logic circuits andlinear analog circuits. A threshold setting implant is applied to thechannel regions of the charge retaining transistors of the NAND andNAND-based NOR memory arrays.

A high voltage thick insulation layer is grown in the area for the logiccircuits and linear analog circuits and the peripheral circuits for thenonvolatile memory circuits. In various embodiments the high voltagethick insulation layer is an oxide insulation layer grown on the surfaceof the substrate. Upon removal of the high voltage thick insulationlayer in the area of the charge retaining transistors of the nonvolatilememory circuits, a tunneling insulation layer is formed over the area ofthe charge retaining transistors of the nonvolatile memory circuits. Invarious embodiments, the tunneling insulation layer is a tunnelingoxide.

In some embodiments, a first conductive layer is formed on the substrateabove the tunnel insulation layer and the thick insulation layer. Invarious embodiments the first conductive layer is a firstpolycrystalline silicon layer. The first conductive layer is patternedto define a floating gate for each of the floating gate charge retainingtransistors. Then, a nitride layer and two oxide layers are formed onthe first conductive layer to form an oxide-nitride-oxide (ONO) chargetrapping layer.

An active area mask is employed to define the areas of the shallowtrench isolation to separate the area of the nonvolatile memory arraycircuits, the logic circuits and the linear analog circuits. The definedareas of the active area mask are etched to create the trenches and thenfilled with trench insulation that in various embodiments is a siliconoxide. Further, in various embodiments the shallow trench isolationself-aligns the charge retaining regions of the charge retainingtransistors. In the embodiments having floating gate charge retainingregions, the shallow trench isolation provides the self alignment of thefirst conductive layer to improve performance of the charge retainingtransistors.

In the embodiments having a floating gate charge retaining transistors,an inter-level dielectric layer is formed on the first conductive layer.In various embodiments, the inter-level dielectric layer is anoxide-nitride-oxide (ONO) formed by a high temperature chemical vapordeposition. The inter-level dielectric is then etched in the activeareas for peripheral circuitry of the nonvolatile memory array circuits,the logic circuits, and the linear circuits and a dual gate mask isformed. The high voltage thick insulation is removed in the active areasfor peripheral circuitry of the nonvolatile memory array circuits, thelogic circuits, and the linear circuits having the low voltagetransistors and a thin gate insulation is grown in the regions definingthe low voltage transistors. The thin gate insulation, in variousembodiments, is a silicon oxide.

A second conductive layer is formed on the surface of the substrate. Invarious embodiments, the conductive layer is a second polycrystallinesilicon that is deposited to thickness of from approximately 1,500 Å to3,000 Å. The second polycrystalline silicon conductive layer is doped towith an impurity to increase the conductivity of the secondpolycrystalline silicon conductive layer. In some embodiments, thesecond polycrystalline silicon conductive layer has a conductive filmadded to a top surface to form a low resistance polycide layer. Acapping layer is deposited over the second conductive layer to preventpeeling of the conductive films where in various embodiments theconductive films are tungsten.

A control gate mask is applied to the second polycrystalline siliconconductive layer with the capping layer to define the control gates ofthe charge retaining transistors and the gates of the NMOS and PMOStransistors of the peripheral circuits for the nonvolatile memory arraycircuits, logic circuits and linear analog circuits. A PMOS mask isformed over the regions of the PMOS transistors to protect the regionsof the PMOS transistors. A first lightly doped drain (LDD) implant of animpurity of the first conductivity type is applied to the surface of thesubstrate. The capping layer, the second polycrystalline layer, theinter-level dielectric, the first polycrystalline silicon layer, and thetunneling insulation layer form a stacked gate for the floating gatecharge retaining transistors. The stacked gate becomes a self-aligningfeature for the lightly doped drain implant to form the source anddrains of the floating gate charge retaining transistors. The cappinglayer and the gates of the NMOS transistors peripheral circuits for thenonvolatile memory array circuits, logic circuits and linear analogcircuits are self-aligning features for the lightly doped drain implantto form the lightly doped drains of the peripheral circuits for thenonvolatile memory array circuits, logic circuits and linear analogcircuits. The lightly doped drain implant may be an arsenic implant or aphosphorus implant of a density of from approximately 1e12 toapproximately 1e15.

A NMOS mask is placed over the regions of the NMOS transistors of thenonvolatile memory array, the peripheral circuits for the nonvolatilememory array circuits, logic circuits and linear analog circuits. Asecond lightly doped drain implant of an impurity of the secondconductivity type is applied to the surface of the substrate. Thecapping layer and the gates of the PMOS transistors peripheral circuitsfor the nonvolatile memory array circuits, logic circuits and linearanalog circuits are self-aligning features for the lightly doped drainimplant to form the lightly doped drains of the peripheral circuits forthe nonvolatile memory array circuits, logic circuits and linear analogcircuits. The lightly doped drain implant may be a boron implant or aboron di-flouride (BF2) implant of a density of from approximately 1e12to approximately 1e15.

A peripheral implant mask is formed over the substrate leaving thenonvolatile memory array circuits exposed for a cell source and drainimplant. The stacked gate is self-aligning feature for the cellsource/drain implant of the first conductivity type to form the sourceand drains for the charge retaining transistors. In some embodiments,the cell source/drain implant is preceded by a halo implant of thesecond conductivity type within the triple well against the junctionwalls to limit the extent of depletion regions.

A thick insulation layer is formed on the surface of the substrate andthen defined to form spacers adjacent to the stacked gate structure ofthe charge retaining transistors and the gates of the NMOS and PMOStransistors. The low voltage transistors and the nonvolatile memoryarray circuits have a high voltage diffusion masking applied to them. Adouble diffusion implant of the first conductivity type is applied tothe high voltage transistors to form the source and drain of the highvoltage transistors. In various embodiments the implant density ischosen such that the junction breakdown voltage is greater thanapproximately +20V.

The high voltage diffusion masking is removed and a first low voltagediffusion masking is applied to the regions of the nonvolatile memoryarray circuits, logic circuits and linear analog circuits having thesecond type conductivity and a first low voltage diffusion having aconductivity of the first type is applied to the low voltage and highvoltage transistors of the first conductivity type to form a shallowjunction depth for low voltage applications and for a metal contact forthe high voltage transistors. In some embodiments, the high voltagetransistors are covered with the first low voltage diffusion masking.Upon removal of the low voltage diffusion masking from the high voltageregion, a diffusion plug is created to make a contact region for thesource and drains of the high voltage transistors.

The first low voltage diffusion masking is removed from the surface ofthe substrate and a second low voltage diffusion masking is applied tothe high and low voltage transistors of the first conductivity type. Asecond low voltage diffusion is applied to the area of the transistorswith the second conductivity type to create the source and drains of thetransistors of the second conductivity type to form a shallow junctiondepth for low voltage applications.

A second interlayer dielectric is formed on the surface of thesubstrate. The second interlayer dielectric is a borophosphosilicateglass (BPSG) or a phosphosilicate glass (PSG). The second interlayerdielectric is formed by chemical vapor deposition followed by a chemicalmechanical planarization. A photoresist layer is formed on the secondinterlayer dielectric and patterned to expose the drain and sourceregions of the charge retaining transistors and the NMOS and PMOStransistors. An etching process exposes the drain and source regions ofthe charge retaining transistors and the NMOS and PMOS transistors.Contact regions are made to the sources and drains and filled with abarrier metal. In various embodiments, the barrier metal is TitaniumNitride/titanium alloy.

A first level metal is formed on the surface of the second interlayerdielectric. In some embodiments, the first level metal is sputtered ontothe surface of the substrate or electroplated on the surface of thesubstrate. In various embodiments the first level metal is aluminum andother embodiments, the first level metal is copper. The first levelmetal is then patterned to form interconnections for the nonvolatilememory array circuits, logic circuits and linear analog circuits.Additional layers of the interlayer dielectric and metal conductors areformed to provide more interconnections for the nonvolatile memory arraycircuits, logic circuits and linear analog circuits.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 a is a schematic of a NAND-based NOR flash memory cell embodyingthe principles of the present disclosure.

FIGS. 1 b-1 is a top plan view of an implementation of a NAND-based NORflash memory cell embodying the principles of the present disclosure.

FIGS. 1 b-2 is a cross sectional view of an implementation of aNAND-based NOR flash memory cell embodying the principles of the presentdisclosure.

FIG. 1 c is a schematic of an embodiment of a NAND cell NAND-based NORflash memory cell.

FIG. 1 d is a cross-sectional diagram of the embodiment of a NAND cellof FIG. 1 c NAND-based NOR flash memory cell.

FIGS. 2-16, 17 a-17 b, 18-20 are cross-sectional diagrams defining anembodiment of a process for fabricating a System-on-Chip integratedcircuit embodying the principles of the present disclosure incorporatingvarious embodiments of NAND-based NOR cells and NAND cells.

FIGS. 21 a-21 c are cross-sectional diagrams describing an embodiment ofthe formation of the contact metallurgy, inter-level dielectricinsulating layers, multiple level metal interconnections, andinter-metal via interconnections of the System-on-Chip integratedcircuit embodying the principles of the present disclosure incorporatingvarious embodiments of NAND-based NOR cells and NAND cells.

DETAILED DESCRIPTION

The punch-through phenomenon of the charge retaining transistors of theNOR flash memory cell has forced the charge retaining transistors to befabricated with a sufficiently large channel length to prevent thepunch-through. While the NAND flash memory cell is structured to have aserial NAND string with a gating transistor that overcomes the scalingproblem, the NAND flash memory cell has a relatively slow read speed.The size of the NOR flash memory cell and the slow read speed of theNAND flash memory cell make them actually unsuitable embedded flashmemory technology for System-on-Chip (SoC) designs. The powerconsumption of the NOR flash memory cells of the prior art does not meetthe requirements of “Green Memory”. The slow read speed of the NAND cellcan not meet the performance requirements for SoC designs.

The 771 patent application describes a NAND-based NOR flash memory cell.The NAND-based NOR memory cell is designed and marketed by APlus FlashTechnology, Inc., San Jose, Calif. under the HiNOR™ name. The NAND-basedNOR flash memory cell combines the advantage of the scaling capabilityof NAND flash memory cell and the fast read speed of the NOR flashmemory cell to provide a true low power flash memory for the embeddedapplications for the SoC.

A SoC is formed on a substrate that is divided into functional regions.The functional regions include at least one embedded memory region thatincludes at least one NAND-based NOR flash memory array. The functionalregions further include at least one logic region that includes logiccircuits configured to be a computer central processing unit (CPU), adigital signal processor, a graphics processor, or any other logicalfunction. The functional regions further includes at least one linearregion that includes analog circuits configured to be a radiotransmitter, a radio receiver, an audio amplifier, power supply controlcircuitry, or any other analog function.

FIG. 1 a is the schematic diagram of a NAND-based dual floating gatetransistor NOR flash memory cell 100 embodying the principles of thepresent disclosure. FIG. 1 b-1 is a top plan view of an implementationof a NAND-based NOR flash memory cell 100 embodying the principles ofthe present disclosure. FIG. 1 b-2 is a cross sectional view of animplementation of a NAND-based NOR flash memory cell 100 embodying theprinciples of the present disclosure. The NAND-based NOR flash memorycell 100 is formed in the top surface of a P-type substrate P-SUB. AN-type material is diffused into the surface of the P-type substrateP-SUB to form a deep n-type diffusion well DNW. A P-type material isthen diffused into the surface of the deep n-type diffusion well DNW toform a shallow p-type diffusion well TPW (commonly referred to as atriple P-well). The N-type material is then diffused into the surface ofthe shallow p-type diffusion well TPW to form the source/drain region(D) 115 of the floating gate transistor M0, the source/drain region 122of the floating gate transistor M1 and the common source/drain (S/D)120. The common source/drain 120 is structured to provide the soleconnection of the source region of the floating gate transistor M0 andthe drain of the floating gate transistors M1. A first polycrystallinesilicon layer is formed above the bulk region of the shallow p-typediffusion well TPW between the source/drain region 115 and the commonsource/drain region 120 floating gate transistor M0 and the commonsource/drain region 120 and the source/drain region 122 of the floatinggate transistor M1 to form the floating gates 145 a and 145 b. A secondpolycrystalline silicon layer is formed over the floating gates 145 aand 145 b to create the control gates (G) 125 a and 125 b of thefloating gate transistors M0 and M1. The common source/drain region 120is formed as self-aligned between the two adjacent secondpolycrystalline silicon layers of two control gates 125 a and 125 b offloating gate transistors M0 and M1. The common source/drain 120 is usedin the floating gate transistors M0 and M1 to reduce the source linepitch.

The gate length of the floating gate transistors M0 and M1 is thechannel region in the bulk regions 132 a and 132 b of shallow P-typewell TPW between source/drain region 115 and the common source/drainregion 120 of the floating gate transistor M0 and the commonsource/drain region 120 and the source/drain region 122 of the floatinggate transistors M0 and M1. The NOR floating gate transistor's 110channel width is determined by the width of the N-diffusion of thesource/drain region 115, the source/drain region 122 and the commonsource/drain region 120. The typical unit size of the dual floating gatetransistor NOR flash memory cell 100 is from approximately 12λ² toapproximately 15λ². Therefore the effective size for a single bit NORcell is approximately 6λ². The effective size (6λ²) of a single bit NORcell is slightly larger than a NAND cell size of the prior art. However,the effective size of a single bit NOR cell is much smaller than the NORcell size (15λ²) of the prior art for a semiconductor manufacturingprocess below 50 nm. The effective single bit/single transistor size ofthe dual floating gate transistor NOR flash memory cell 100 remainsconstant an effective cell size of approximately 6λ². The constant cellsize is a result of the scalability is identical to that of the NANDflash memory cell of the prior art.

The floating gate layers 145 a and 145 b each respectively storeelectron charges to modify the threshold voltage of the floating gatetransistors M0 and M1. In all operations such as read, program anderase, the P-type substrate P-SUB is always connected to a groundreference voltage source (GND). The deep n-type diffusion well DNW isconnected to the power supply voltage source (VDD) in read and programoperations but is connected to a very large erase voltage level of fromapproximately +20V to approximately +25.0V in a Fowler-Nordheim channelerase operation. The shallow P-type well TPW is connected to the groundreference voltage in normal read and program operations but is connectedto the very large erase voltage level in the Fowler Nordheim channelerase operation. The deep n-type diffusion well DNW and the shallowp-type diffusion well TPW are biased commonly to the very large erasevoltage level to avoid the undesired forward current. In present designsof dual floating gate transistor NOR flash memory cell 100, the powersupply voltage source is either 1.8V or 3.0V.

In an array of dual floating gate transistor NOR flash memory cells 100,the floating gate transistors M0 and M1 are arranged in rows andcolumns. The second polycrystalline silicon layer 125 that is thecontrol gate of the floating gate transistors M0 and M1 and is extendedto form a word-line WL that connects to each of the floating gatetransistors M0 and M1 on a row of the array. The drain/source 115 of thefloating gate transistors M0 and M1 is connected to a bit line BL. Thesource/drain 122 of the floating gate transistor M1 is connected to asource line SL. The bit line BL and the source line SL being formed inparallel and in parallel with a column of the floating gate transistorsM0 and M1

A tunnel oxide is formed on top of the channel region 132 a and 132 bbetween the source/drain region 115 and the common source/drain region120 of the floating gate transistor M0 and between the commonsource/drain region 120 and the source/drain region 122 of the floatinggate transistor M1 and beneath the floating gates 145 a and 145 b. Thethickness of the tunnel oxide is typically 100 Å. The tunnel oxide isthe layer through which the electron charges pass during theFowler-Nordheim channel tunneling programming and erasing. During aprogramming operation, the Fowler-Nordheim tunnel programming attractselectrons to the floating gates 145 a and 145 b through the tunnel oxidefrom cell's channel regions 132 a and 132 b within the shallow p-typediffusion well TPW. During an erasing operation, the Fowler-Nordheimtunnel erasing expels stored electrons from the floating gates 145 a and145 b through the tunnel oxide to cell's channel regions 132 a and 132 band thus into the shallow p-type diffusion well TPW.

After an erase operation, fewer electron charges are stored in thefloating gates 145 a and 145 b that results in a decrease in an erasedthreshold voltage level (Vt0) of the floating gate transistors M0 andM1. In contrast, in a Fowler-Nordheim program operation, electrons areattracted into floating gates 145 a and 145 b so that a first programmedthreshold voltage level (Vt1) and a second programmed threshold voltagelevel of the floating gate transistors M0 and M1 by applying the verylarge programming voltage level of from approximately 15.0V toapproximately 20.0V to the control gates 125 a and 125 b of the floatinggates 145 a and 145 b.

FIG. 1 c is a schematic of an embodiment of a NAND cell and FIG. 1 d isa cross-sectional diagram of the embodiment of a NAND cell of FIG. 1 c.The NAND flash memory cell 5 is fashioned from a serially connectedgroup of charge retaining floating gate transistors cell1, cell2, . . ., cellm−1, cellm, a top select transistor M_(SG1), and bottom selecttransistors M_(SG2) are formed within a substrate P-SUB. A deep N-wellDNW is formed in the substrate and a triple P-well TPW is formed in thedeep N-well DNW. Common drain/source regions 220 a, 220 b, . . . , 220m, the drain 218 of the top select transistor M_(SG1) and the source 222of the bottom select transistors M_(SG2) are formed within the tripleP-well TPW. A relatively thin gate oxide 216 and 218 and a tunnelingoxide 215 a, 215 b, . . . , 215 m are deposited on the substrate P-SUBover the triple P-well TPW in the channel regions 232 a, 232 b, 232 m ofthe charge retaining floating gate transistors cell1, cell2, . . .cellm−1, cellm, the channel region 231 of the top select transistorM_(SG1), and the channel region 233 of the bottom select transistorsM_(SG2). A polycrystalline silicon layer that forms the charge retainingfloating gates 245 a, 245 b, . . . , 245 m is then disposed over thetunneling oxide 215 a, 215 b, . . . , 215 m above the channel regions232 a, 232 b, . . . , 232 m between drain/source regions 220 a, 220 b, .. . , 220 m. A second dielectric oxide layer is placed on top of chargeretaining floating gates 245 a, 245 b, . . . , 245 m to separate thecharge retaining floating gates 245 a, 245 b, . . . , 245 m from asecond poly-crystalline silicon layer that forms the control gates 225a, 225 b, . . . , 225 m of the charge retaining floating gatetransistors cell1, cell2, . . . cellm−1, cellm. The secondpoly-crystalline silicon layer also forms the gate 227 of the top selecttransistor M_(SG1) and the gate 229 of the bottom select transistorsM_(SG2). The control gates 225 a, 225 b, . . . , 225 m of the chargeretaining floating gate transistors cell1, cell2, . . . cellm−1, cellmare connected to word lines WLa, WLb, . . . , WLm. The drain region 218of the top select transistor M_(SG1) is connected to a bit line BL andthe source 222 of the bottom select transistors M_(SG2) is connected toa source line SL. The gate 227 of the top select transistor M_(SG1) isconnected to a first select gate control signal SG1 and the gate 229 ofthe bottom select transistors M_(SG2) is connected to a second selectgate control signal SG2. The control signal WL1 to WLm are connected thecharge retaining floating gate transistors cell1, cell2, . . . cellm−1,cellm during reading, programming, and erasing.

The bit line BL and the source line SL are connected to a columncontroller (not shown) to provide the necessary bit line operationalvoltages to selected NAND flash memory cells 200 for programming,reading, and erasing retained charges representing digital data bitswithin charge retaining floating gates 245 a, 245 b, . . . , 245 m ofeach of the selected NAND flash memory cells 200.

The word lines WL1, WL2, . . . , WLm, top select gate line SG1, and thebottom select gate line SG2 are connected to a word line controller (notshown). The word line controller transfers word line operationalvoltages for selecting, programming, reading, and erasing the retainedcharges representing the digital data bits within the charge retainingfloating gates 245 a, 245 b, . . . , 245 m of each of the selected NANDflash memory cells 200.

FIGS. 2 to 16, 17 a-17 b, 18-20 are cross-sectional diagrams defining anembodiment of a process for fabricating a System-on-Chip integratedcircuit embodying the principles of the present disclosure incorporatingNAND cells and NAND-based NOR cells. In FIG. 2 a sacrificial oxide SACOis grown on the surface of a provided P-type substrate P-SUB to athickness of approximately 200 Å. FIG. 3 illustrates four implantationsteps. In the first step an impurity species of a first conductivitytype that in various embodiments is an N-type impurity is implanted inthe surface of the P-type substrate P-SUB to form a deep N-type wellregion DNW in the nonvolatile memory cell region NVMC. In the secondstep, an impurity species of the second conductivity type that invarious embodiments is P-type impurity is implanted in the deep N-typewell DNW to form a triple P-type well region TPW in the nonvolatilememory cell region NVMC. In various embodiments, the triple P-type wellregion TPW is formed by implanting ions such as boron ions with animplantation of energy of about 50,000 volts. In the third step, theimpurity species of the first type (N+) is implanted into the region LVPof the P-type substrate P-SUB that will contain low voltage PMOStransistors to form a normal N-type well NW. In the fourth step, theimpurity species of the second type (P+) is implanted into the regionLVN of the P-type substrate P-SUB that will contain low voltage NMOStransistors to form a normal P-type well PW. A drive-in process isperformed for all the dopants in the p-type well PW and the n-type wellNW. Each of the p-type wells PW and the n-type wells NW are driven todifferent required depths based on their application.

In FIG. 4, a threshold adjustment impurity species I_(VTNH) is implantedin the surface of the P-type substrate P-SUB in the region HVN that isoccupied by the high voltage NMOS transistors. The implant energy needsto be adjusted so that it will implant through the sacrificial oxideSACO. In FIG. 5, a threshold adjustment impurity species I_(VTNZ) isimplanted in the surface of the P-type substrate P-SUB in the regionHVZN that is occupied by the high voltage zero threshold NMOStransistors. The implant energy needs to be adjusted so that it willimplant through the sacrificial oxide SACO. In FIG. 6, a thresholdadjustment impurity species I_(VTLVP) is implanted in the surface of theP-type substrate P-SUB in the N-well region NW that is occupied by thelow voltage PMOS transistors. As previously described, the implantenergy needs to be adjusted so that it will implant through thesacrificial oxide SACO. In FIG. 7, a threshold adjustment impurityspecies I_(VTLVN) is implanted in the surface of the P-type substrateP-SUB in the P-well region PW that is occupied by the low voltage NMOStransistors. As previously described, the implant energy needs to beadjusted so that it will implant through the sacrificial oxide SACO. InFIG. 8, a threshold adjustment impurity species I_(CVT) is implanted inthe surface of the P-type substrate P-SUB in the nonvolatile memory cellregion NVM that is occupied by the charge retaining floating gatetransistors. As previously described, the implant energy needs to beadjusted so that it will implant through the sacrificial oxide SACO.

In FIG. 9, the surface of the P-type substrate P-SUB is exposed to anitride for growing a thick high voltage oxide HVOX to cover the highvoltage transistor regions HVZN and HVN and the low voltage transistorregions LVP and LVN. A nitride removal operation and a pad oxidestripping operation are then performed in the nonvolatile memory cellregion NVMC. A tunnel oxide TOX is then grown in the nonvolatile memorycell region NVMC. A first conductive layer FG of polycrystalline siliconis deposited across the whole P-type substrate P-SUB as shown in FIG.10. This conductive layer FG is a doped polycrystalline silicon that isformed by chemical vapor deposition to form an undoped polycrystallinesilicon layer followed by performing an ion implantation process to dopethe undoped polycrystalline silicon layer to the appropriateconductivity. The first conductive layer is approximately 800˜1200Angstroms thick.

Referring now to FIG. 11, an active area mask is applied to the firstdoped polycrystalline silicon conductive layer FG to define the trencharea. An etching process is performed to create the trenches that definethe nonvolatile memory cell region NVMC, the low voltage PMOS transistorregion LVP, the low voltage NMOS transistor region LVN, the high voltagezero threshold NMOS transistor region HVZN, and the high voltage NMOStransistor region HVN. The doped polycrystalline silicon layer FG inexposed areas of the active area mask is etched with such that it isself-aligned with the active area to form the charge retaining floatinggate. This greatly improves the performance of the flash cell array. Itis very critical to treat corners of the tunnel oxide layer TOX so thatthe leakage at the flash cell edge is controlled to a low level.

Refer now to FIG. 12. In the active area of the nonvolatile memoryregion NVMC, a device dielectric layer ONO is formed on the surface ofthe doped polycrystalline silicon layer FG that is the floating gate foreach of the floating gate charge retaining transistors. The devicedielectric layer ONO is created by high temperature chemical vapordeposition of a layer of silicon oxide, followed by a layer of siliconnitride, and followed by another layer of silicon oxide on the floatinggate doped polycrystalline silicon layer FG. In the process, thechemical vapor deposition is over the entire P-type substrate P-SUB andis etched away from the high voltage transistor regions HVZN and HVN andthe low voltage transistor regions LVP and LVN external to thenonvolatile memory region NVMC.

In FIG. 13, a dual gate mask is placed on the P-type substrate P-SUBwith the low voltage transistor regions LVP and LVN exposed. The highvoltage oxide HVOX is etched away in the exposed the low voltagetransistor regions LVP and LVN. A thin oxide LVOX is then grown in thelow voltage transistor regions LVP and LVN.

In FIG. 14, a second doped polycrystalline silicon conductive layer CGis deposited on the entire surface of the P-type substrate P-SUB to athickness from approximately 500 Å to approximately 1,000 Å. The seconddoped polycrystalline silicon conductive layer CG is formed by achemical vapor deposition doped in situ. In some embodiments, the secondpolycrystalline silicon conductive layer CG has a conductive film addedto a top surface to form a low resistance polycide layer. In someembodiments a silicide over polycrystalline silicon (polycide) processis performed with a caping layer of silicide capping layer CAPL formedon the top surface of the second doped polycrystalline siliconconductive layer CG to prevent the peeling of the tungsten films. Thecapping layer CAPL is formed of silicon nitride or silicon oxide and hasa thickness of from approximately 1,500 Å to approximately 3,000 Å. Thecapping layer CAPL is also formed with a chemical deposition process.

A mask is placed on the surface of the P-type substrate P-SUB to definethe control gates of the floating gate charge retaining transistors ofthe nonvolatile memory region NVMC and the gate structures of the highvoltage transistor regions HVZN and HVN and the low voltage transistorregions LVP and LVN. The second doped polycrystalline silicon conductivelayer CG and the capping layer CAPL are etched to remove the materialessentially exposing the shallow trench isolation and portions of thethick high voltage oxide HVOX of the high voltage transistor regionsHVZN and HVN, the thin oxide LVOX of the low voltage transistor regionsLVP and LVN, and the tunnel oxide TOX. This defines the control gates ofthe nonvolatile memory cell region NVMC and the gates of the highvoltage transistor regions HVZN and HVN and the low voltage transistorregions LVP and LVN. The nonvolatile memory cell region NVMC now has thestacked gate structure for each of the floating gate charge retainingtransistors of each memory cell. The stacked gate structure consists ofthe tunnel oxide TOX, the doped polycrystalline silicon conductivefloating gate layer FG, the device dielectric layer ONO, the seconddoped polycrystalline silicon conductive control gate layer CG.

In FIG. 15, the stacked gate structure acts as a self-aligned structurefor an N-type lightly doped drain impurity species implant I_(DSN) thatis diffused in the nonvolatile memory cell region NVMC and the lowvoltage transistor region LVN. The N-type lightly doped drain impurityspecies implant I_(DSN) forms the drains and sources for the N-type MOStransistors and the floating gate charge retaining transistors. TheN-type lightly doped drain impurity species implant I_(DSN) is, in someembodiments, an arsenic ion implant and in other embodiments, the N-typelightly doped drain impurity species implant I_(DSN) is a phosphorus ionimplant.

In FIG. 16, the stacked gate structure, again, acts as a self-alignedstructure for a P-type lightly doped drain impurity species implantI_(DSP) that is diffused in the low voltage transistor region LVP. TheP-type lightly doped drain impurity species implant I_(DSP) forms thedrains and sources for the P-type MOS transistors. The P-type lightlydoped drain impurity species implant I_(DSP) is, in some embodiments, aBoron ion implant and in other embodiments, the P-type lightly dopeddrain impurity species implant I_(DSP) is a boron di-flouride (BF2) ionimplant.

FIG. 17 a is a cross-sectional drawing illustrating the structure of acolumn of a NAND nonvolatile memory cell in the nonvolatile memory cellregion NVMC in parallel with the bit and source lines embodying theprinciples of this disclosure. The N-type impurity species implantI_(CSD) forms the drains and sources for the floating gate chargeretaining transistors. The N-type impurity species I_(CSD) is, in someembodiments, an arsenic ion implant and in other embodiments, the N-typeimpurity species I_(CSD) is a phosphorus ion implant and is equivalentto the N-type lightly doped drain implant I_(DSN) of FIG. 15, but with adifferent dosage.

FIG. 17 b is a cross-sectional drawing illustrating the structure of acolumn of NOR nonvolatile memory cells NOR1, NOR2, . . . NORn, in thenonvolatile memory cell region NVMC in parallel with the bit and sourcelines embodying the principles of this disclosure. The embodiments ofthe NOR nonvolatile memory cells NOR1, NOR2, . . . NORn illustrate twoNAND-based floating gate charge retaining transistors in each of the NORnonvolatile memory cells NOR1, NOR2, . . . NORn where one of theNAND-based floating gate charge retaining transistors functions asselect gating transistor in operation. The N-type impurity speciesimplant I_(CSD) forms the drains and sources for the floating gatecharge retaining transistors of each of the NOR nonvolatile memory cellsNOR1, NOR2, . . . NORn. The N-type impurity species implant I_(CSD) is,in some embodiments, an arsenic ion implant and in other embodiments,the N-type impurity species I_(CSD) is a phosphorus ion implant and issimilar to the N-type lightly doped drain implant I_(DSN) of FIG. 15.

In FIG. 18, the low voltage transistor regions LVP and LVN and thenonvolatile memory cell region NVMC have a mask applied to them and thesource and drain regions of the high voltage transistor regions HVZN andHVN are exposed. A double diffused implant IDDn is performed for highvoltage NMOS transistors in the high voltage transistor regions HVZN andHVN on top of the P-type substrate P-SUB to form source and drainregions. The density of the impurity species I_(DDN) is selected suchthat the junction breakdown voltage exceeds approximately +20 volts.

In FIG. 19, the low voltage transistor region LVP and the nonvolatilememory cell region NVMC have a mask applied to them and the source anddrain regions of the high voltage transistor regions HVZN and HVN andthe low voltage transistor region LVN are exposed. A normal source/drainimplant I_(SDN) is performed in the P-type well PW within the lowvoltage transistor region LVN to form the source and drain regions ofthe low voltage transistors in the low voltage transistor regions LVN.The source/drain implant I_(SDN) has a relatively low energy ofapproximately 10 kV to achieve a shallow junction depth for low voltageapplications. The source/drain implant I_(SDN) is also performed in thehigh voltage transistor regions HVZN and HVN to create the metalcontacts for the sources and drains of the high voltage transistors ofthe high voltage transistor regions HVZN and HVN. In other embodiments,the source/drain implant I_(SDN) in the high voltage transistor regionsHVZN and HVN is replaced by a contact plug implant to the N+ contactonly to reduce the transistor size.

In FIG. 20, the low voltage transistor region LVN and the nonvolatilememory cell region NVMC, and the high voltage transistor regions HVZNand HVN have a mask applied to them and the source and drain regions ofthe low voltage transistor regions LVP are exposed. A normalsource/drain implant I_(SDP) is diffused to the surface of the P-typesubstrate P-SUB to create the sources and drains for the low voltagePMOS transistors of the low voltage transistor regions LVP. The lowvoltage source/drain implant I_(SDP) is performed on top of the N-typewell NW to form sources and drains of the P-type MOS transistors of thelow voltage transistor regions LVP.

FIGS. 21 a-21 c are cross-sectional describing an embodiment of theformation of the contact metallurgy, inter-level dielectric insulatinglayers, multiple level metal interconnections, and inter-metal viainterconnections of the System-on-Chip integrated circuit embodying theprinciples of the present disclosure incorporating various embodimentsof NAND-based NOR cells and NAND cells. FIG. 21 a illustrates the lowvoltage transistor regions LVP and LVN and the high voltage transistorregions HVZN and HVN. FIG. 21 c illustrates the structure of a column ofNOR nonvolatile memory cells NOR1, NOR2, . . . NORn, in the nonvolatilememory cell region NVMC in parallel with the bit and source linesembodying the principles of this disclosure. FIG. 21 b illustrates thestructure of a column of a NAND nonvolatile memory cell in thenonvolatile memory cell region NVMC in parallel with the bit and sourcelines embodying the principles of this disclosure. After theimplantations as described above, a first interlayer dielectricinsulating layer IDE1 is formed on the entire wafer. The firstinterlayer dielectric insulating layer IDE1 fills the openings formed inthe second doped polycrystalline silicon conductive layer CG. Theinterlayer dielectric insulating layer IDE1 is formed by a chemicalvapor deposition process. In some embodiments the first interlayerdielectric insulating layer IDE1 is a borophosphosilicate glass (BPSG)and in other embodiments, the interlayer dielectric insulating layerIDE1 is a phosphosilicate glass (PSG). A chemical mechanical polishingis then conducted to planarize the surface of the first interlayerdielectric insulating layer IDE1.

The surface of the P-type substrate P-SUB is coated with patternedphotoresist layer. The patterned photoresist layer is arranged to exposethe drain and source regions of the N-type and P-type MOS transistorsand floating gate charge retaining transistors of the high voltagetransistor regions HVZN and HVN, low voltage transistor regions LVP andLVN, and the nonvolatile memory cell region NVMC. The P-type substrateP-SUB is etched until drain and source regions of the N-type and P-typeMOS transistors and floating gate charge retaining transistors of thehigh voltage transistor regions HVZN and HVN, low voltage transistorregions LVP and LVN, and the nonvolatile memory cell region NVMC areexposed. The patterned photoresist layer and the stacked gate structurewith the spacer act as a mask for the etching.

The openings to the selected sources and drains of the N-type and P-typeMOS transistors and floating gate charge retaining transistors of thehigh voltage transistor regions HVZN and HVN, low voltage transistorregions LVP and LVN, and the nonvolatile memory cell region NVMC arefilled with a contact barrier metal CT1, CT2, . . . , CTn. The contactbarrier metal CT1, CT2, . . . , CTn is a titanium nitride/titanium(TiN/Ti) alloy barrier metal. Where a metal wiring layer must contact agate of the high voltage transistor regions HVZN and HVN and low voltagetransistor regions LVP and LVN and the nonvolatile memory cell regionNVMC a similar inter-layer connecting metal V0 is formed in openingsformed during the etching.

After the formation of the contact barrier metal CT1, CT2, . . . , CTnand the inter-layer connecting via V0, a first metal conductive layer M1is formed on the surface of the P-type substrate P-SUB. In someembodiments, the first conductive metal layer M0 is aluminum and issputtered over the entire surface of the P-type substrate P-SUB. Inother embodiments, the first conductive metal layer M1 is copper and isplated in selective areas on the surface of the P-type substrate P-SUB.In still other embodiments, the first conductive metal layer M1 iscopper that is deposited in a single damascene and chemical mechanicalpolishing CMP process.

For additional conductive metal layers M2, . . . , Mn−1, Mn, aninterlayer layer dielectric insulating layer IDE2, . . . , IDEn isdeposited on each of the previous conductive metal layers M1, M2, . . ., Mn−1 and patterned with opening to accept the inter-layer connectingvias V1, V2, . . . , Vn. The additional conductive metal layers M2, . .. , Mn−1, Mn are formed on their respective lower interlayer dielectricinsulating layer IDE2, . . . , IDEn. In some embodiments, the additionalconductive metal layers M2, . . . , Mn−1, Mn are aluminum and aresputtered over the entire surface of the P-type substrate P-SUB. Inother embodiments, the additional conductive metal layers M2, . . . ,Mn−1, Mn are copper and is plated in selective areas on the surface ofthe P-type substrate P-SUB. In still other embodiments, the additionalconductive metal layers M2, . . . , Mn−1, Mn are copper that isdeposited in a single damascene and chemical mechanical polishing CMPprocess.

In FIG. 21 b, the contact barrier metal CT1 is applied to the drain ofthe first select gate transistor SG1 and the contact barrier metal CT2the source of the second select gate transistor SG2. The contact barriermetal CT1 is connected to the metal interconnection that forms the bitline for the column of the array of nonvolatile memory cells. Thecontact barrier metal or other conductive material CT2 is speciallyformed and connected to the metal interconnection that forms the sourceline for the column of the array of nonvolatile memory cells.

Similarly, as shown in FIG. 21 c, each pair of the floating gate chargeretaining transistors of each of the NOR nonvolatile memory cells NOR1,NOR2, . . . NORn has the drain of a first of the floating gate chargeretaining transistors in contact with the contact barrier metal CT1,CT2, . . . , CTn and the source of the second of the floating gatecharge transistor in contact with the contact barrier metal CT1, CT2, .. . , CTn. For example in the NOR nonvolatile memory cell NOR1 the drainof the first floating gate charge retaining transistor is connected tothe contact barrier metal CT1 and the source of the second floating gatecharge retaining transistor is connected to the contact barrier metalCT2. The contact barrier metal CT1, CT2, . . . , CTn structures areappropriately connected to the conductive metal layers M1 or M2 that arethe bit lines and source lines for the column of NOR nonvolatile memorycells NOR1, NOR2, . . . NORn. The drain of the first floating gatetransistors are connected to the bit line and the sources of secondfloating gate transistors are connected to the source line associatedwith the column of NOR nonvolatile memory cells NOR1, NOR2, . . . NORn.

The NAND-based NOR structure is such that at least one of the floatinggate charge retaining transistors of the column of NOR nonvolatilememory cells NOR1, NOR2, . . . NORn functions as a select gatetransistor to prevent leakage current through the plurality of floatinggate charge retaining transistors when the floating gate chargeretaining transistors is not selected for reading.

While this disclosure has been particularly shown and described withreference to the preferred embodiments thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade without departing from the spirit and scope of the disclosure. Thecharge retaining transistors in other embodiment have charge trappingoxide/nitride/oxide layers with no floating gate and still embody theprinciples of the present disclosure.

What is claimed is:
 1. A method for forming an integrated circuit on asubstrate comprising the steps of: forming nonvolatile memory arraycircuits, logic circuits and linear analog circuits in activesemiconductor areas; separating the nonvolatile memory array circuits,the logic circuits and the linear analog circuits by isolation regionswith a shallow trench isolation; connecting the nonvolatile memory arraycircuits, the logic circuits and the linear analog circuits such thatthe nonvolatile memory array circuits, the logic circuits and the linearanalog circuits are in intercommunication to transfer signals and databetween them and external circuitry; wherein forming the nonvolatilememory array circuits further comprises forming the nonvolatile memorycircuits in a triple well structure by forming a first deep well with animpurity of a first conductivity type and forming a second well with animpurity of a second conductivity type in the first deep well; andwherein forming the nonvolatile memory array circuits further comprisesforming NAND-based NOR memory cells by forming at least two floatinggate transistors, serially connecting the at least two floating gatetransistors such that at least one of the floating gate transistorsfunctions as a select gate transistor to prevent leakage current throughthe charge retaining transistors when the charge retaining transistorsis not selected for reading.
 2. The method for forming the integratedcircuit of claim 1 wherein the impurity of the first conductivity typeis an N-type impurity
 3. The method for forming the integrated circuitof claim 1 wherein the impurity of the second conductivity type is aP-type impurity.
 4. The method for forming the integrated circuit ofclaim 1 wherein forming the nonvolatile memory array circuits furthercomprises the step of: forming NAND and NAND-based NOR charge retainingcells in rows and columns of formed within designated active areas. 5.The method for forming the integrated circuit of claim 4 wherein formingNAND-based NOR charge retaining cells further comprises the steps of:associating each column of NAND-based NOR charge retaining cells with abit line and a source line.
 6. The method for forming the integratedcircuit of claim 4 wherein forming NAND-based NOR charge retaining cellsfurther comprises the steps of: connecting a drain of a topmost chargeretaining transistor of each of the NAND-based NOR charge retainingcells to the bit line associated with and parallel to each of thecolumns of serially connected NAND-based NOR charge retaining cells; andconnecting a source of the bottommost charge retaining transistor ofeach of the NAND-based NOR charge retaining cells to a source lineassociated with and parallel to the column of NAND-based NOR chargeretaining cells and parallel to the associated bit line.
 7. The methodfor forming the integrated circuit of claim 4 wherein forming NAND-basedNOR charge retaining cells comprises the step of: connecting a controlgate of the NAND-based NOR flash memory cells of each of the rows to aword line.
 8. The method for forming the integrated circuit of claim 1wherein forming nonvolatile memory array circuits, logic circuits andlinear analog circuits in active semiconductor areas comprises the stepsof: forming a shallow well of the first conductivity type and a shallowwell of the second conductivity type; and fabricating the low voltagelogic and linear circuits in the first conductivity type and a shallowwell of the second conductivity type.
 9. The method for forming theintegrated circuit of claim 8 wherein the shallow well of the firstconductivity type is an N-well and the shallow well of the secondconductivity type is a P-well.
 10. The method for forming the integratedcircuit of claim 9 wherein PMOS transistors are formed in the N-well andNMOS transistors are formed in the P-well.
 11. The method for formingthe integrated circuit of claim 1 further comprising the step of:forming high voltage MOS transistors in the substrate for the logic andlinear analog circuits.
 12. The method for forming the integratedcircuit of claim 11 wherein forming high voltage MOS transistorscomprises performing an ion implantation at the channel regions of thehigh voltage MOS transistors to establish the appropriate threshold. 13.The method for forming the integrated circuit of claim 12 whereinperforming the ion implantation comprises the step of: performing afirst ion implantation operation to set the threshold for the highvoltage MOS transistor with a standard threshold voltage.
 14. The methodfor forming the integrated circuit of claim 13 wherein performing theion implantation further comprises the step of: performing a second ionimplantation operation to set the threshold for a zero threshold highvoltage MOS transistor.
 15. The method for forming the integratedcircuit of claim 1 wherein forming nonvolatile memory array circuits,logic circuits and linear analog circuits further comprises the step of:applying a threshold setting implant to the channel regions of thecharge retaining transistors of the NAND and NAND-based NOR memoryarrays.
 16. The method for forming the integrated circuit of claim 8wherein forming nonvolatile memory array circuits, logic circuits andlinear analog circuits further comprises the step of: growing a highvoltage thick insulation in active semiconductor areas for the logiccircuits and linear analog circuits and the peripheral circuits for thenonvolatile memory circuits.
 17. The method for forming the integratedcircuit of claim 16 wherein the high voltage thick insulation layer is anitride insulation layer grown on the surface of the substrate.
 18. Themethod for forming the integrated circuit of claim 18 wherein formingnonvolatile memory array circuits further comprises the step of: forminga tunneling insulation layer is formed in the over the area of thecharge retaining transistors of the nonvolatile memory circuits.
 19. Themethod for forming the integrated circuit of claim 18 wherein thetunneling insulation layer is a tunneling oxide.
 20. The method forforming the integrated circuit of claim 18 wherein forming nonvolatilememory array circuits, logic circuits and linear analog circuits furthercomprises the step of: forming a first conductive layer on the substrateabove the tunnel insulation layer and the thick insulation layer. 21.The method for forming the integrated circuit of claim 20 wherein thefirst conductive layer is a first polycrystalline silicon layer.
 22. Themethod for forming the integrated circuit of claim 20 wherein formingnonvolatile memory array circuits, logic circuits and linear analogcircuits further comprises the step of: patterning the first conductivelayer to define a floating gate for each of the floating gate chargeretaining transistors.
 23. The method for forming the integrated circuitof claim 22 wherein forming nonvolatile memory array circuits, logiccircuits and linear analog circuits further comprises the step of:forming a nitride layer and a second oxide layer on the tunneling oxidelayer to form an oxide-nitride-oxide (ONO) charge retaining layer. 24.The method for forming the integrated circuit of claim 22 whereinseparating the nonvolatile memory array circuits, the logic circuits andthe linear analog circuits comprises the step of: defining an activearea mask for the areas of the shallow trench isolation.
 25. The methodfor forming the integrated circuit of claim 24 wherein separating thenonvolatile memory array circuits, the logic circuits and the linearanalog circuits further comprises the step of: etching the defined areasof the active area mask create the trenches and filling the trencheswith trench insulation.
 26. The method for forming the integratedcircuit of claim 25 wherein the trench insulation is a silicon oxide.27. The method for forming the integrated circuit of claim 25 theshallow trench isolation self-aligns the charge retaining regions of thecharge retaining transistors.
 28. The method for forming the integratedcircuit of claim 27 wherein the shallow trench isolation provides theself alignment of the first conductive layer to improve performance ofthe charge retaining transistors.
 29. The method for forming theintegrated circuit of claim 22 wherein separating the nonvolatile memoryarray circuits, the logic circuits and the linear analog circuitsfurther comprises the step of: forming an inter-level dielectric on thefirst conductive layer.
 30. The method for forming the integratedcircuit of claim 28 wherein the inter-level dielectric layer is anoxide-nitride-oxide (ONO) formed by a high temperature chemical vapordeposition.
 31. The method for forming the integrated circuit of claim29 wherein separating the nonvolatile memory array circuits, the logiccircuits and the linear analog circuits further comprises etching theinter-level dielectric in the active areas.
 32. The method for formingthe integrated circuit of claim 16 wherein forming nonvolatile memoryarray circuits, logic circuits and linear analog circuits furthercomprises the step of: removing the high voltage thick insulation in theactive areas for peripheral circuitry of the nonvolatile memory arraycircuits, the logic circuits, and the linear circuits having the lowvoltage transistors and growing a thin gate insulation in the regionsdefining low voltage transistors.
 33. The method for forming theintegrated circuit of claim 32 wherein the thin gate insulation is asilicon oxide.
 34. The method for forming the integrated circuit ofclaim 29 wherein forming nonvolatile memory array circuits, logiccircuits and linear analog circuits further comprises forming a secondconductive layer on the surface of the substrate.
 35. The method forforming the integrated circuit of claim 34 wherein the second conductivelayer is a second polycrystalline silicon that is deposited to thicknessof from approximately 1,500 Å to 3,000 Å.
 36. The method for forming theintegrated circuit of claim 35 wherein the second polycrystallinesilicon conductive layer is doped with an impurity to increase theconductivity of the second polycrystalline silicon conductive layer. 37.The method for forming the integrated circuit of claim 34 whereinforming nonvolatile memory array circuits, logic circuits and linearanalog circuits further comprises the steps of: applying conductivefilms to a top surface of the second conductive layer to improveconductivity of the second conductive layer, and depositing a cappinglayer over the second conductive layer to prevent peeling of conductivefilms
 38. The method for forming the integrated circuit of claim 37wherein the conductive films are tungsten.
 39. The method for formingthe integrated circuit of claim 34 wherein forming nonvolatile memoryarray circuits, logic circuits and linear analog circuits furthercomprises the steps of: applying a control gate mask to the secondpolycrystalline silicon conductive layer and the capping layer anddefining the control gates of the charge retaining transistors and thegates of the NMOS and PMOS transistors of the peripheral circuits forthe nonvolatile memory array circuits, logic circuits and linear analogcircuits.
 40. The method for forming the integrated circuit of claim 39wherein forming nonvolatile memory array circuits, logic circuits andlinear analog circuits in active semiconductor areas further comprisesthe step of: forming a PMOS mask over the regions of the PMOStransistors to protect the regions of the PMOS transistors.
 41. Themethod for forming the integrated circuit of claim 40 wherein formingnonvolatile memory array circuits, logic circuits and linear analogcircuits in active semiconductor areas further comprises the step of:implanting a first lightly doped drain (LDD) implant of an impurity ofthe first conductivity type to the surface of the substrate.
 42. Themethod for forming the integrated circuit of claim 41 wherein thelightly doped drain implant is an arsenic implant or a phosphorusimplant of a density of from approximately 1e12 to approximately 1e15.43. The method for forming the integrated circuit of claim 41 whereinforming nonvolatile memory array circuits, logic circuits and linearanalog circuits in active semiconductor areas further comprises placingan NMOS mask over the regions of the NMOS transistors of the nonvolatilememory array, the peripheral circuits for the nonvolatile memory arraycircuits, logic circuits and linear analog circuits and implanting asecond lightly doped drain implant of an impurity of the secondconductivity type to the surface of the substrate.
 44. The method forforming the integrated circuit of claim 43 wherein the lightly dopeddrain implant may be a boron implant or a boron di-flouride (BF2)implant of a density of from approximately 1e12 to approximately 1e15.45. The method for forming the integrated circuit of claim 43 whereinforming nonvolatile memory array circuits, logic circuits and linearanalog circuits further comprises the step of: forming a peripheralimplant mask over the substrate and leaving the nonvolatile memory arraycircuits exposed for a cell source and drain implant.
 46. The method forforming the integrated circuit of claim 45 wherein forming nonvolatilememory array circuits, logic circuits and linear analog circuits furthercomprises the step of: implanting a cell source/drain implant of thefirst conductivity type to form the source and drains for the chargeretaining transistors wherein the stacked gate is self-aligning feature.47. The method for forming the integrated circuit of claim 46 whereinforming nonvolatile memory array circuits, logic circuits and linearanalog circuits further comprises the step of: implanting a halo implantof the second conductivity type within the triple well against thejunction walls to limit the extent of depletion regions prior to thecell source/drain implant.
 48. The method for forming the integratedcircuit of claim 46 wherein forming nonvolatile memory array circuits,logic circuits and linear analog circuits further comprises the stepsof: forming a thick spacer insulation layer on the surface of thesubstrate and defining the thick spacer insulation layer to form spacersadjacent to the stacked gate structure of the charge retainingtransistors and the gates of the NMOS and PMOS transistors.
 49. Themethod for forming the integrated circuit of claim 48 wherein formingnonvolatile memory array circuits, logic circuits and linear analogcircuits further comprises the step of: applying a high voltagediffusion masking to the low voltage transistors and the nonvolatilememory array circuits.
 50. The method for forming the integrated circuitof claim 49 wherein forming nonvolatile memory array circuits, logiccircuits and linear analog circuits in active semiconductor areasfurther comprises the step of: diffusing a double diffusion implant ofthe first conductivity type to the high voltage transistors to form thesource and drain of the high voltage transistors.
 51. The method forforming the integrated circuit of claim 50 wherein the double diffusionimplant density is chosen such that the junction breakdown voltage isgreater than approximately +20V.
 52. The method for forming theintegrated circuit of claim 49 wherein forming nonvolatile memory arraycircuits, logic circuits and linear analog circuits further comprisesthe steps of: removing the high voltage diffusion masking and applying afirst low voltage diffusion masking to the regions of the nonvolatilememory array circuits, logic circuits and linear analog circuits havingthe second type conductivity and diffusing a first low voltage diffusionhaving a conductivity of the first type to the low voltage and highvoltage transistors of the first conductivity type to form a shallowjunction depth for low voltage applications and for a metal contact forthe high voltage transistors.
 53. The method for forming the integratedcircuit of claim 49 wherein forming nonvolatile memory array circuits,logic circuits and linear analog circuits further comprises the stepsof: covering the high voltage transistors with the first low voltagediffusion masking; removing the low voltage diffusion masking from thehigh voltage region; and creating a diffusion plug to make a contactregion for the source and drains of the high voltage transistors. 54.The method for forming the integrated circuit of claim 52 whereinforming nonvolatile memory array circuits, logic circuits and linearanalog circuits in further comprises the steps of: removing the firstlow voltage diffusion masking is removed from the surface of thesubstrate and applying a second low voltage diffusion masking to thehigh and low voltage transistors of the first conductivity type.
 55. Themethod for forming the integrated circuit of claim 54 wherein formingnonvolatile memory array circuits, logic circuits and linear analogcircuits further comprises the step of: implanting a second low voltagediffusion to the area of the transistors with the second conductivitytype to create the source and drains of the transistors of the secondconductivity type to form a shallow junction depth for low voltageapplications.
 56. The method for forming the integrated circuit of claim55 wherein forming nonvolatile memory array circuits, logic circuits andlinear analog circuits further comprises forming a second interlayerdielectric on the surface of the substrate.
 57. The method for formingthe integrated circuit of claim 56 wherein the second interlayerdielectric is a borophosphosilicate glass (BPSG) or a phosphosilicateglass (PSG) formed by chemical vapor deposition followed by a chemicalmechanical planarization.
 58. The method for forming the integratedcircuit of claim 56 wherein forming nonvolatile memory array circuits,logic circuits and linear analog circuits further comprises the stepsof: forming and patterning a second interlayer photoresist layer on thesecond interlayer dielectric to expose the drain and source regions ofthe charge retaining transistors and the NMOS and PMOS transistors. 59.The method for forming the integrated circuit of claim 58 whereinforming nonvolatile memory array circuits, logic circuits and linearanalog circuits further comprises the step of: etching the secondinterlayer photoresist layer for exposing the drain and source regionsof the charge retaining transistors and the NMOS and PMOS transistors.60. The method for forming the integrated circuit of claim 59 whereinforming nonvolatile memory array circuits, logic circuits and linearanalog circuits further comprises the step of: forming contact regionsto the sources and drains and filling the contact regions with a barriermetal.
 61. The method for forming the integrated circuit of claim 60wherein the barrier metal is Titanium Nitride/titanium alloy.
 62. Themethod for forming the integrated circuit of claim 61 wherein formingnonvolatile memory array circuits, logic circuits and linear analogcircuits further comprises the step of: forming a first level metal onthe surface of the second interlayer dielectric.
 63. The method forforming the integrated circuit of claim 62 wherein forming the firstlevel metal comprises the step of: sputtering the first level metal ontothe surface of the substrate or electroplating the first level metal onthe surface of the substrate.
 64. The method for forming the integratedcircuit of claim 62 wherein the first level metal is aluminum or iscopper.
 65. The method for forming the integrated circuit of claim 62wherein forming nonvolatile memory array circuits, logic circuits andlinear analog circuits further comprises the step of: patterning thefirst level metal to form interconnections for the nonvolatile memoryarray circuits, logic circuits and linear analog circuits.
 66. Themethod for forming the integrated circuit of claim 65 wherein formingnonvolatile memory array circuits, logic circuits and linear analogcircuits further comprises the step of: forming additional layers of theinterlayer dielectric and metal conductors to provide addedinterconnections for the nonvolatile memory array circuits, logiccircuits and linear analog circuits.